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PDTA123J Datasheet(PDF) 2 Page - NXP Semiconductors |
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PDTA123J Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2004 Aug 02 2 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 47 kΩ PDTA123J series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − −50 V IO output current (DC) − −100 mA R1 bias resistor 2.2 − k Ω R2 bias resistor 47 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE NPN COMPLEMENT PHILIPS EIAJ PDTA123JE SOT416 SC-75 27 PDTC123JE PDTA123JEF SOT490 SC-89 27 PDTC123JEF PDTA123JK SOT346 SC-59 43 PDTC123JK PDTA123JM SOT883 SC-101 DG PDTC123JM PDTA123JS SOT54 (TO-92) SC-43 TA123J PDTC123JS PDTA123JT SOT23 − *23(1) PDTC123JT PDTA123JU SOT323 SC-70 *43(1) PDTC123JU |
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