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ZVN3310A Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZVN3310A Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 3 page N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt V DS *R DS(on)= 10Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 200 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 50 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) 10 Ω VGS=10V,ID=500mA Forward Transconductance(1)(2 ) gfs 100 mS VDS=25V,ID=500mA Input Capacitance (2) Ciss 40 pF Common Source Output Capacitance (2) Coss 15 pF VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 5pF Turn-On Delay Time (2)(3) td(on) 5ns VDD ≈25V, ID=500mA Rise Time (2)(3) tr 7ns Turn-Off Delay Time (2)(3) td(off) 6ns Fall Time (2)(3) tf 7ns E-Line TO92 Compatible ZVN3310A 3-378 D G S TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) Transfer Characteristics 0 2 4 6810 010 20 30 40 50 Saturation Characteristics 6 0 2 4 8 04 8 12 16 20 10 Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) 5V ID= 1A 0.5A 0.2A VGS-Gate Source Voltage (Volts) 1.4 1.2 0.8 0.2 0 0.4 1.0 0.6 VGS= 10V 7V 8V VDS - Drain Source Voltage (Volts) On-resistance vs gate-source voltage VGS-Gate Source Voltage (Volts) 12 3 4 5 6 7 8 9 10 20 6V 4V 3V 1.6 1.2 0.4 0 0.8 0 2 4 6810 1.4 1.2 0.8 0.2 0 0.4 1.0 0.6 VDS= 25V 9V 1.4 1.0 0.6 0.2 5V VGS= 10V 7V 8V 6V 4V 3V 9V ID= 1A 0.5A 0.2A 1 10 100 Normalised RDS(on) and VGS(th) vs Temperature -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Drai n- So urce Resi sta nc e R DS( on ) Gate Threshold Vo ltage VGS (th) ID=-0.5A T-Temperature (C°) 0.4 -80 -60 ZVN3310A 3-379 |
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