PDTB123Y datasheet(5/10 Pages) NXP

Part #	PDTB123Y

Description	PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 10 page

PDTB123Y_SER_2

Product data sheet

Rev. 02 — 16 November 2009

5 of 10

NXP Semiconductors

PDTB123Y series

PNP 500 mA resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = 10 kΩ

VCE = −5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = −0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = −5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3.

On-state input voltage as a function of

collector current; typical values

Fig 4.

Off-state input voltage as a function of

collector current; typical values

006aaa357

10

102

103

hFE

1

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

006aaa358

IC (mA)

−1

−102

−10

−10−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

006aaa359

IC (mA)

−10−1

−103

−102

−1

−10

−1

−10

VI(on)

(V)

−10−1

(1)

(2)

(3)

IC (mA)

−10−1

−10

−1

006aaa360

−1

−10

VI(off)

(V)

−10−1

(1)

(2)

(3)

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