PDTC143XM datasheet(6/12 Pages) NXP

Part #	PDTC143XM

Description	NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 10 k廓

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Manufacturer	NXP [NXP Semiconductors]

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PDTC143X_SER_10

Product data sheet

Rev. 10 — 16 November 2009

6 of 12

NXP Semiconductors

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 10 kΩ

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

VCE =0.3 V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

VCE =5V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 3.

On-state input voltage as a function of

collector current; typical values

Fig 4.

Off-state input voltage as a function of

collector current; typical values

IC (mA)

10−1

102

10

1

006aaa178

102

10

103

hFE

1

(1)

(2)

(3)

IC (mA)

1102

10

006aaa179

102

103

VCEsat

(mV)

10

(1)

(2)

(3)

IC (mA)

10−1

102

10

1

006aaa180

10

1

102

VI(on)

(V)

10−1

(1)

(2)

(3)

006aaa181

IC (mA)

10−2

10

1

10−1

1

10

VI(off)

(V)

10−1

(1)

(3)

(2)

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PDTC143XM Datasheet(PDF) 6 Page - NXP Semiconductors

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