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PDTC143XM Datasheet(PDF) 6 Page - NXP Semiconductors |
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PDTC143XM Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 10 — 16 November 2009 6 of 12 NXP Semiconductors PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 k Ω, R2 = 10 kΩ VCE =5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values VCE =0.3 V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C VCE =5V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values IC (mA) 10−1 102 10 1 006aaa178 102 10 103 hFE 1 (1) (2) (3) IC (mA) 1102 10 006aaa179 102 103 VCEsat (mV) 10 (1) (2) (3) IC (mA) 10−1 102 10 1 006aaa180 10 1 102 VI(on) (V) 10−1 (1) (2) (3) 006aaa181 IC (mA) 10−2 10 1 10−1 1 10 VI(off) (V) 10−1 (1) (3) (2) |
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