PDTD123ET datasheet(4/10 Pages) NXP

Part #	PDTD123ET

Description	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

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Manufacturer	NXP [NXP Semiconductors]

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4 / 10 page

PDTD123E_SER_2

Product data sheet

Rev. 02 — 16 November 2009

4 of 10

NXP Semiconductors

PDTD123E series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = 2.2 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

SOT346

-

500

K/W

SOT54

-

250

K/W

SOT23

-

500

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =40 V; IE = 0 A

-

100

nA

VCB =50 V; IE = 0 A

-

100

nA

ICEO

collector-emitter

cut-off current

VCE =50 V; IB =0A

-

0.5

μA

IEBO

emitter-base cut-off

current

VEB =5V; IC =0 A

-

2

mA

hFE

DC current gain

VCE =5 V; IC =50mA

40

-

VCEsat

collector-emitter

saturation voltage

IC =50mA; IB =2.5 mA

-

0.3

V

VI(off)

off-state input

voltage

VCE =5 V; IC = 100 μA0.6

1.1

1.8

V

VI(on)

on-state input

voltage

VCE =0.3 V; IC =20mA

1.0

1.5

2.0

V

R1

bias resistor 1 (input)

1.54

2.2

2.86

k

Ω

R2/R1

bias resistor ratio

0.9

1.0

1.1

Cc

collector capacitance VCB =10 V; IE =ie =0A;

f=100MHz

-7

-

pF

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