ISSUE 1 - MARCH 2001

ZVN4525E6

4

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNI

T

CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

250

285

V

I

Zero Gate Voltage Drain Current

I

DSS

35

500

nA

V

Gate-Body Leakage

I

GSS

±1

±100

nA

V

Gate-Source Threshold Voltage

V

GS(th)

0.8

1.4

1.8

V

I

D

=1mA, V

Static Drain-Source On-State Resistance (1)

R

DS(on)

5.6

5.9

6.4

8.5

9.0

9.5

Ω

Ω

Ω

V

V

V

Forward Transconductance (3)

g

fs

0.3

0.475

S

V

DYNAMIC (3)

Input Capacitance

C

iss

72

pF

V

f=1MHz

Output Capacitance

C

oss

11

pF

Reverse Transfer Capacitance

C

rss

3.6

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

1.25

ns

V

R

(refer to test circuit)

Rise Time

t

r

1.70

ns

Turn-Off Delay Time

t

d(off)

11.40

ns

Fall Time

t

f

3.5

ns

Total Gate Charge

Q

g

2.6

3.65

nC

V

test circuit)

Gate-Source Charge

Q

gs

0.2

0.28

nC

Gate Drain Charge

Q

gd

0.5

0.70

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.97

V

T

V

Reverse Recovery Time (3)

t

rr

186

260

ns

T

di/dt= 100A/

µs

Reverse Recovery Charge (3)

Q

rr

34

48

nC

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.