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PUMD10 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PUMD10 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page 2004 Apr 15 4 NXP Semiconductors Product data sheet NPN/PNP resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 47 kΩ PEMD10; PUMD10 THERMAL CHARACTERISTICS Notes 1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth(j-a) thermal resistance from junction to ambient SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient SOT363 note 1 416 K/W SOT666 notes 1 and 2 416 K/W |
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