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PESD12VL1BA Datasheet(PDF) 7 Page - NXP Semiconductors |
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PESD12VL1BA Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 7 of 15 NXP Semiconductors PESDxL1BA series Low capacitance bidirectional ESD protection diodes in SOD323 Tamb = 25 °C tp = 8/20 µs exponential decay waveform; see Figure 1 (1) PESD3V3L1BA and PESD5V0L1BA (2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA Fig 3. Peak pulse power dissipation as a function of pulse time; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values Tamb = 25 °C; f = 1 MHz (1) PESD3V3L1BA (2) PESD5V0L1BA Tamb = 25 °C; f = 1 MHz (1) PESD12VL1BA (2) PESD15VL1BA (3) PESD24VL1BA Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values 006aaa066 103 102 104 PPP (W) 10 tp (µs) 1104 103 10 102 (1) (2) Tj (°C) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 PPP 0 PPP(25°C) VR (V) 05 4 23 1 006aaa067 70 90 100 110 Cd (pF) 50 60 80 (1) (2) VR (V) 025 20 10 15 5 006aaa068 8 12 4 16 20 Cd (pF) 0 (1) (2) (3) |
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