PESDXS4UD datasheet(4/12 Pages) NXP

Part #	PESDXS4UD

Description	Quadruple ESD protection diode arrays in a SOT457 package

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Manufacturer	NXP [NXP Semiconductors]

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PESDXS4UD_SER_2

Product data sheet

Rev. 02 — 21 August 2009

4 of 12

NXP Semiconductors

PESDxS4UD series

Quadruple ESD protection diode arrays in a SOT457 package

6.

Characteristics

Fig 1.

8/20

µs pulse waveform according to

IEC 61000-4-5

Fig 2.

ESD pulse waveform according to

IEC 61000-4-2

t (

µs)

040

30

10

20

001aaa630

40

80

120

IPP

(%)

0

e−t

100 % IPP; 8 µs

50 % IPP; 20 µs

001aaa631

IPP

100 %

90 %

t

30 ns

60 ns

10 %

tr = 0.7 ns to 1 ns

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse standoff voltage

PESD3V3S4UD

-

3.3

V

PESD5V0S4UD

-

5

V

PESD12VS4UD

-

12

V

PESD15VS4UD

-

15

V

PESD24VS4UD

-

24

V

IRM

reverse leakage current

PESD3V3S4UD

VRWM = 3.3 V

-

300

800

nA

PESD5V0S4UD

VRWM = 5 V

-

80

200

nA

PESD12VS4UD

VRWM = 12 V

-

0.05

15

nA

PESD15VS4UD

VRWM = 15 V

-

0.05

15

nA

PESD24VS4UD

VRWM = 24 V

-

0.05

15

nA

VBR

breakdown voltage

IR =1mA

PESD3V3S4UD

5.3

5.6

5.9

V

PESD5V0S4UD

6.4

6.8

7.2

V

PESD12VS4UD

12.5

14.5

16

V

PESD15VS4UD

15.5

18

20.5

V

PESD24VS4UD

25.5

27

29

V

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