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PESD3V3U1UT Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD3V3U1UT Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 August 2009 4 of 13 NXP Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2 Table 6. ESD maximum ratings Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] PESD3V3U1UT - 30 kV PESD5V0U1UT - 30 kV PESD12VU1UT - 30 kV PESD15VU1UT - 30 kV PESD24VU1UT - 23 kV PESDxU1UT HBM MIL-STD-883 - 10 kV Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD-883; class 3 > 4 kV Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( µs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 µs 50 % IPP; 20 µs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
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