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ZVP2106A Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZVP2106A Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 3 page  P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt V DS *R DS(on)=5Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V Continuous Drain Current at Tamb=25°C ID -280 mA Pulsed Drain Current IDM -4 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -60 V ID=-1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -100 µA µA VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) -1 A VDS=-18 V, VGS=-10V Static Drain-Source On-State Resistance (1) RDS(on) 5 Ω VGS=-10V,ID=-500mA Forward Transconductance (1)(2) gfs 150 mS VDS=-18V,ID=-500mA Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 60 pF VDS=-18V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) td(on) 7ns VDD ≈-18V, ID=-500mA Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% (2) Sample test. ( 3 ) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator E-Line TO92 Compatible ZVP2106A 3-417 D G S TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) Transfer Characteristics Normalised RDS(on) and VGS(th) vs Temperature -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Dr ai n- So urc e R es ista nc e RDS( on ) Gate Threshold Vo ltage VGS (th) ID=-0.5A 0-2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 Saturation Characteristics Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) -10V VGS-Gate Source Voltage (Volts) VGS=-10V ID=-1mA VGS=VDS -3.5 -3.0 -2.0 -0.5 0 -1.0 -2.5 -1.5 2.6 180 VGS= -20V -14V -5V -6V -7V -4V -3.5V -8V VGS= -18V VDS - Drain Source Voltage (Volts) On-resistance v drain current ID-Drain Current (Amps) -0.1 -1.0 10 5 -2.0 -12V -6V -4V 0 -2 -4 -6 -8 -10 1 -10V -9V -8V -7V -5V -9V 0 -0.6 -0.4 -0.2 -0.8 -1.6 -1.4 -1.2 -1.0 -1.8 -2.0 0 -10 -6 -2 -4 -8 0-2 -4 -6 -8 -10 ID= -1A -0.5A -0.25A -0.8 -0.6 -0.2 -0.4 VDS=-10V -1.6 -1.4 -1.0 -1.2 -6V -7V VGS=-5V -8V -10V -9V Tj-Junction Temperature (°C) ZVP2106A 3-418 |
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