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PHD38N02LT Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHD38N02LT Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page PHD38N02LT_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 February 2007 5 of 12 NXP Semiconductors PHD38N02LT N-channel TrenchMOS logic level FET 6. Characteristics Table 5. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V Tj =25 °C 20 --V Tj = −55 °C 18 --V VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS; see Figure 9 and 10 Tj =25 °C 0.5 1.0 1.5 V Tj = 175 °C 0.3 - - V Tj = −55 °C - - 1.8 V IDSS drain leakage current VDS =20V; VGS =0V Tj =25 °C - 0.05 1.0 µA Tj = 175 °C - - 500 µA IGSS gate leakage current VGS = ±12 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS =5V; ID = 25 A; see Figure 6 and 8 Tj =25 °C - 13.5 16 m Ω Tj = 175 °C - 24.3 28.8 m Ω Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS =10V; VGS =5V; see Figure 11 and 12 - 15.1 - nC QGS gate-source charge - 4.5 - nC QGD gate-drain charge - 4.2 - nC Ciss input capacitance VGS =0V; VDS = 20 V; f = 1 MHz; see Figure 14 - 800 - pF Coss output capacitance - 260 - pF Crss reverse transfer capacitance - 190 - pF td(on) turn-on delay time VDS =10V; ID = 25 A; VGS =10V; RG = 5.6 Ω -4 -ns tr rise time - 12.5 - ns td(off) turn-off delay time - 30 - ns tf fall time -23 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 13 - 0.98 1.2 V |
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