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ZVP4525GTA Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZVP4525GTA Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 8 page ISSUE 1 - MARCH 2001 ZVP4525G 4 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -250 -285 V I D=-1mA, VGS=0V Zero Gate Voltage Drain Current I DSS -30 -500 nA V DS=-250V, VGS=0V Gate-Body Leakage I GSS ±1 ±100 nA V GS=±40V, VDS=0V Gate-Source Threshold Voltage V GS(th) -0.8 -1.5 -2.0 V I D =-1mA, V DS=VGS Static Drain-Source On-State Resistance (1) R DS(on) 10 13 14 18 Ω Ω V GS=-10V, ID=-200mA V GS=-3.5V, ID=-100mA Forward Transconductance (3) g fs 80 200 mS V DS=-10V,ID=-0.15A DYNAMIC (3) Input Capacitance C iss 73 pF V DS=-25 V, VGS=0V, f=1MHz Output Capacitance C oss 12.8 pF Reverse Transfer Capacitance C rss 3.91 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 1.53 ns V DD =-30V, ID=-200mA R G=50Ω,VGS=-10V (refer to test circuit) Rise Time t r 3.78 ns Turn-Off Delay Time t d(off) 17.5 ns Fall Time t f 7.85 ns Total Gate Charge Q g 2.45 3.45 nC V DS=-25V,VGS=-10V, ID=-200mA(refer to test circuit) Gate-Source Charge Q gs 0.22 0.31 nC Gate Drain Charge Q gd 0.45 0.63 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.97 V T j=25°C, IS=-200mA, V GS=0V Reverse Recovery Time (3) t rr 205 290 ns T j=25°C, IF=-200mA, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 21 29 nC (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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