PHP36N03LT_3

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Product data sheet

Rev. 03 — 29 March 2010

3 of 13

NXP Semiconductors

PHP36N03LT

N-channel TrenchMOS logic level FET

Fig 1.

Normalized continuous drain current as a

function of mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

0

200

150

50

100

03aa24

40

80

120

(%)

0

0

200

150

50

100

03aa16

40

80

120

(%)

0

001aae811

1

10

10

(A)

1

100

μs

1 ms

DC