2004 Jan 22

2

NXP Semiconductors

Product data sheet

NPN switching transistor

PMBT2369

FEATURES

• Low current (max. 200 mA)

• Low voltage (max. 15 V).

APPLICATIONS

• High-speed switching, especially in portable equipment.

DESCRIPTION

NPN switching transistor in a SOT23 plastic package.

MARKING

Note

1.

* = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER

MARKING CODE(1)

PMBT2369

*1J

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM255

Top view

2

3

1

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

PMBT2369

−

plastic surface mounted package; 3 leads

SOT23

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

15

V

emitter-base voltage

open collector

−

5

V

collector current (DC)

−

200

mA

peak collector current

−

300

mA

peak base current

−

100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C