PMD4002K datasheet(7/15 Pages) NXP

Part #	PMD4002K

Description	MOSFET driver

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Manufacturer	NXP [NXP Semiconductors]

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7 / 15 page

PMD4002K_1

Product data sheet

Rev. 01 — 3 November 2006

7 of 15

NXP Semiconductors

PMD4002K

MOSFET driver

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

NPN transistor

ICBO

collector-base cut-off

current

VCB =40V; IE =0A

-

10

nA

VCB =40V; IE =0A;

Tj = 150 °C

--10

µA

hFE

DC current gain

VCE =5V; IC = 1 mA

100

210

-

VCE =5V; IC = 200 mA

100

170

300

VCE =5V; IC = 500 mA

[1] 50

100

-

VCEsat

collector-emitter

saturation voltage

IC = 200 mA; IB = 20 mA

-

150

250

mV

IC = 500 mA; IB =50mA

[1] -

300

500

mV

VBEsat

base-emitter saturation

voltage

IC = 200 mA; IB = 20 mA

-

0.86

1

V

IC = 500 mA; IB =50mA

[1] -

0.95

1.1

V

VBE

base-emitter voltage

VCE =5V; IC = 300 mA

-

830

-

mV

Diode

VF

forward voltage

IF = −200 mA

[1] --

−1.1

V

Device

td

delay time

IC = 0.15 A; IB = 5 mA

-

6

-

ns

tr

rise time

-

21

-

ns

ton

turn-on time

-

27

-

ns

ts

storage time

-

484

-

ns

tf

fall time

-

120

-

ns

toff

turn-off time

-

604

-

ns

Device with optional capacitor C1

td

delay time

IC = 0.15 A; IB = 5 mA;

C1 = 1 nF

-3

-

ns

tr

rise time

-

1

-

ns

ton

turn-on time

-

4

-

ns

ts

storage time

-

23

-

ns

tf

fall time

-

41

-

ns

toff

turn-off time

-

64

-

ns

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