PMD9010D_1

© NXP B.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 20 November 2006

3 of 16

NXP Semiconductors

PMD9010D

MOSFET driver

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

Transistor 2 (TR2)

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

45

V

collector current

-

0.1

A

peak collector current

single pulse;

-

0.2

A

peak base current

single pulse;

-

0.2

A

total power dissipation

[1] -

290

mW

[2] -

325

mW

[3] -

400

mW

Diode (D1)

forward current

-

−0.2

A

-

−0.6

A

non-repetitive peak forward

current

square wave

−9A

−3A

-

−1.7

A

Device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit