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ZXM62N02E6 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXM62N02E6 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXM62N02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 20 V Gate Source Voltage VGS ± 12 V Continuous Drain Current (VGS=4.5V; TA=25°C)(b) (VGS=4.5V; TA=70°C)(b) ID 3.2 2.6 A Pulsed Drain Current (c) IDM 18 A Continuous Source Current (Body Diode) (b) IS 2.1 A Pulsed Source Current (Body Diode) ISM 18 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 90 PROVISIONAL ISSUE A - JULY 1999 |
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