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PMEM1505PG Datasheet(PDF) 4 Page - NXP Semiconductors |
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PMEM1505PG Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 11 page  PMEM1505PG_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 31 August 2009 4 of 11 NXP Semiconductors PMEM1505PG PNP transistor/Schottky rectifier module 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02 Table 7. Characteristics Tamb =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit PNP transistor ICBO collector-base cut-off current VCB = −15 V; IE =0A - - −100 nA VCB = −15 V; IE =0A; Tj = 150 °C -- −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain VCE = −2 V; IC = −10 mA 200 - - VCE = −2 V; IC = −100 mA 150 - - VCE = −2 V; IC = −500 mA 90 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA [1] -- −25 mV IC = −200 mA; IB = −10 mA - - −150 mV IC = −500 mA; IB = −50 mA - - −250 mV RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA [1] - 300 < 500 m Ω VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] -- −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA [1] -- −0.9 V fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz [1] 100 280 - MHz Cc collector capacitance VCB = −10 V; IE =Ie =0A; f=1MHz - 4.4 10 pF Schottky barrier rectifier VF continuous forward voltage see Figure 1 IF =10mA [1] - 240 270 mV IF = 100 mA [1] - 300 350 mV IF = 500 mA [1] - 400 460 mV IF = 1000 mA [1] - 480 550 mV IR reverse current see Figure 2 VR =5V [1] -5 10 µA VR =8V [1] -7 20 µA VR =15V [1] -10 50 µA Cd diode capacitance VR = 5 V; f = 1 MHz; see Figure 3 - 1925pF |
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