PMF3800SN

N-channel TrenchMOS standard level FET

Rev. 03 — 11 November 2009

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Electrostatically robust due to

integrated protection diodes

Saves PCB space due to small

footprint

Suitable for high frequency

applications due to fast switching

characteristics

Suitable for logic level gate drive

sources

1.3 Applications

High-speed line drivers

Relay drivers

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

60

V

drain current

Figure 1 and 3

-

-

260

mA

total power

dissipation

--0.56

W

Dynamic characteristics

gate-drain charge

Figure 11

-0.07

-

nC

total gate charge

-

0.85

-

nC

Static characteristics

drain-source

on-state resistance

10

-3.8

5.3

Ω

10

-2.8

4.5

Ω