PMN38EN_2

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 02 — 3 October 2007

3 of 12

NXP Semiconductors

PMN38EN

N-channel TrenchMOS logic level FET

Fig 1.

Normalized continuous drain current as a

function of solder point temperature

Fig 2.

Normalized total power dissipation as a

function of solder point temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03aa25

0

40

80

120

0

50

100

150

200

°C)

(%)

03aa17

0

40

80

120

0

50

100

150

200

°C)

(%)

I

I

D

I

D(25°C)

× 100 %

P

P

tot

P

tot(25°C)

× 100 %

003aab227

10

-2

10

-1

1

10

10

2

10

-1

1

10

10

2

(A)

DC

10 ms

1 ms

μs

100 ms

100

μs

T