PMP4501V datasheet(5/14 Pages) NXP

Part #	PMP4501V

Description	NPN/NPN matched double transistors

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Manufacturer	NXP [NXP Semiconductors]

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PMP4501V_G_Y_4

Product data sheet

Rev. 04 — 28 August 2009

5 of 14

NXP Semiconductors

PMP4501V; PMP4501G; PMP4501Y

NPN/NPN matched double transistors

[1]

VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2]

VBE decreases by about 2 mV/K with increasing temperature.

[3]

The smaller of the two values is taken as the numerator.

[4]

The smaller of the two values is subtracted from the larger value.

VBE

base-emitter voltage

VCE =5V;

IC =2mA

[2] 610

660

710

mV

VCE =5V;

IC =10mA

[2] -

-

770

mV

Cc

collector capacitance

VCB =10V;

IE =ie =0A;

f=1MHz

-

1.5

pF

Ce

emitter capacitance

VEB = 0.5 V;

IC =ic =0A;

f=1MHz

-11

-

pF

fT

transition frequency

VCE =5V;

IC = 10 mA;

f = 100 MHz

100

250

-

MHz

NF

noise ﬁgure

VCE =5V;

IC = 0.2 mA;

RS =2kΩ;

f = 10 Hz to

15.7 kHz

-

2.8

-

dB

VCE =5V;

IC = 0.2 mA;

RS =2kΩ;

f = 1 kHz;

B = 200 Hz

-

3.3

-

dB

Per device

hFE1/hFE2

hFE matching

VCE =5V;

IC =2mA

[3] 0.95

1

-

VBE1−VBE2 VBE matching

VCE =5V;

IC =2mA

[4] --2

mV

Table 8.

Characteristics …continued

Tamb =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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