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PMP4501V Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMP4501V Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page PMP4501V_G_Y_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 28 August 2009 5 of 14 NXP Semiconductors PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. VBE base-emitter voltage VCE =5V; IC =2mA [2] 610 660 710 mV VCE =5V; IC =10mA [2] - - 770 mV Cc collector capacitance VCB =10V; IE =ie =0A; f=1MHz - - 1.5 pF Ce emitter capacitance VEB = 0.5 V; IC =ic =0A; f=1MHz -11 - pF fT transition frequency VCE =5V; IC = 10 mA; f = 100 MHz 100 250 - MHz NF noise figure VCE =5V; IC = 0.2 mA; RS =2kΩ; f = 10 Hz to 15.7 kHz - 2.8 - dB VCE =5V; IC = 0.2 mA; RS =2kΩ; f = 1 kHz; B = 200 Hz - 3.3 - dB Per device hFE1/hFE2 hFE matching VCE =5V; IC =2mA [3] 0.95 1 - VBE1−VBE2 VBE matching VCE =5V; IC =2mA [4] --2 mV Table 8. Characteristics …continued Tamb =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit |
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