ZXM64P035G

PROVISIONAL ISSUE A - DECEMBER 2001

3

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -35

V

ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1

A

VDS=-35V, VGS=0V

Gate-Body Leakage

IGSS

100

nA

VGS= 20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-1.0

V

I

D

=-250 A, VDS=VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.075

0.105

VGS=-10V, ID=-2.4A

VGS=-4.5V, ID=-1.2A

Forward Transconductance (1)(3)

gfs

2.3

S

VDS=-10V,ID=-1.2A

DYNAMIC (3)

Input Capacitance

Ciss

825

pF

VDS=-25V, VGS=0V,

f=1MHz

Output Capacitance

Coss

250

pF

Reverse Transfer Capacitance

Crss

80

pF

SWITCHING(2) (3)

Turn-On Delay Time

td(on)

4.4

ns

VDD =-15V, ID=-2.4A

RG=6.0 , VGS=-10V

Rise Time

tr

6.2

ns

Turn-Off Delay Time

td(off)

40

ns

Fall Time

tf

29.2

ns

Total Gate Charge

Qg

46

nC

VDS=-24V,VGS=-10V,

Gate-Source Charge

Qgs

9nC

Gate-Drain Charge

Qgd

11.5

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

-0.95

V

TJ=25 C, IS=-2.4A,

VGS=0V

Reverse Recovery Time (3)

trr

30.2

ns

TJ=25 C, IF=-2.4A,

di/dt= 100A/ s

Reverse Recovery Charge (3)

Qrr

27.8

nC

ELECTRICAL CHARACTERISTICS

NOTES

(1) Measured under pulsed conditions. Width

=300 s. Duty cycle

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.