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ZXM66P02N8TC Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXM66P02N8TC Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 4 page PROVISIONAL ISSUE A - MAY 2001 ZXM66P02N8 2 THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 80 °C/W Junction to Ambient (b) RθJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS ±12 V Continuous Drain Current V GS=-4.5V; TA=25°C (b) V GS=-4.5V; TA=70°C (b) V GS=-4.5V; TA=25°C (a) I D -8.0 -6.5 -6.4 A Pulsed Drain Current (c) I DM -28 A Continuous Source Current (Body Diode)(b) I S -4.15 A Pulsed Source Current (Body Diode)(c) I SM -28 A Power Dissipation at T A=25°C (a) Linear Derating Factor P D 1.56 12.5 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor P D 2.5 20 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C |
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