PROVISIONAL ISSUE A - MAY 2001

ZXMD65P03N8

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNI

T

CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

-30

V

I

Zero Gate Voltage Drain Current

I

DSS

-1

µA V

Gate-Body Leakage

I

GSS

-100

nA

V

Gate-Source Threshold Voltage

V

GS(th)

-1.0

V

I

D

=-250

µA, V

Static Drain-Source On-State Resistance

(1)

R

DS(on)

0.055

0.080

Ω

Ω

V

V

Forward Transconductance (1)(3)

g

fs

8.8

S

V

DYNAMIC (3)

Input Capacitance

C

iss

930

pF

V

f=1MHz

Output Capacitance

C

oss

311

pF

Reverse Transfer Capacitance

C

rss

113

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

3.8

ns

V

R

Rise Time

t

r

6.4

ns

Turn-Off Delay Time

t

d(off)

49.5

ns

Fall Time

t

f

26.2

ns

Gate Charge

Q

g

13

nC

V

Total Gate Charge

Q

g

25.7

nC

V

Gate-Source Charge

Q

gs

3.2

nC

Gate Drain Charge

Q

gd

7.0

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.95

V

T

V

Reverse Recovery Time (3)

t

rr

31.5

ns

T

di/dt= 100A/

µs

Reverse Recovery Charge(3)

Q

rr

63.9

nC

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.