PSMN003-30P_2

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Product data sheet

Rev. 02 — 25 February 2010

7 of 14

NXP Semiconductors

PSMN003-30P

N-channel TrenchMOS intermediate level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Gate-source threshold voltage as a function of

junction temperature

03af50

0

50

100

150

200

250

300

350

400

0

0.5

1

1.5

2

2.5

(A)

3.8 V

4 V

20 V

3.6 V

4.2 V

4.6 V

15 V

4.4 V

5 V

4.8 V

3.4 V

03af52

0

20

40

60

80

100

012

3456

(A)

175

°C

03af66

1

012

3

4

(A)

min

typ

max

10

-1

10

-2

10

-3

10

-4

10

-5

10

-6

03af65

0

1

2

3

4

-60

20

100

180

(V)

max

min

typ

°C)