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TK6P53D Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TK6P53D Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  TK6P53D 2010-01-19 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 525 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 525 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 ⎯ 4.4 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 1.1 1.3 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 3 A 0.6 2.5 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ Reverse transfer capacitance Crss ⎯ 4 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 70 ⎯ pF Rise time tr ⎯ 18 ⎯ Turn-on time ton ⎯ 40 ⎯ Fall time tf ⎯ 8 ⎯ Switching time Turn-off time toff ⎯ 55 ⎯ ns Total gate charge Qg ⎯ 12 ⎯ Gate-source charge Qgs ⎯ 7 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 6 A ⎯ 5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1200 ⎯ ns Reverse recovery charge Qrr IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 7 ⎯ μC Marking (Note 4) Note 4: RL = 67 Ω 0 V 10 V VGS VDD ≈ 200 V ID = 3 A VOUT 50 Ω Duty ≤ 1%, tw = 10 μs TK6P53D Lot No. Part No. (or abbreviation code) * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2digits of the calendar year) |
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