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ZXMN10A11G Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMN10A11G Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 7 page ZXMN10A11G ISSUE 1 - MARCH 2002 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS 100 V ID=250 A, VGS=0V Zero Gate Voltage Drain Current IDSS 1 AVDS=100V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source Threshold Voltage VGS(th) 2.0 4.0 V I D =250 A, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.60 0.70 VGS=10V, ID=2.6A VGS=6V, ID=1.3A Forward Transconductance (3) gfs 3.95 S VDS=15V,ID=2.6A DYNAMIC (3) Input Capacitance Ciss 274 pF VDS=50V,VGS=0V, f=1MHz Output Capacitance Coss 21 pF Reverse Transfer Capacitance Crss 11 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 2.7 ns VDD =50V, ID=1A RG=6.0 ,VGS=10V Rise Time tr 1.7 ns Turn-Off Delay Time td(off) 7.4 ns Fall Time tf 3.5 ns Gate Charge Qg 3nC VDS=50V, VGS=5V, ID=2.5A Total Gate Charge Qg 5.4 nC VDS=50V,VGS=10V, ID=2.5A Gate-Source Charge Qgs 1.4 nC Gate-Drain Charge Qgd 1.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=1.85A, VGS=0V Reverse Recovery Time (3) trr 26 ns TJ=25°C, IF=1.0A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 30 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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