ZXMN10A11G

ISSUE 1 - MARCH 2002

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

100

V

ID=250 A, VGS=0V

Zero Gate Voltage Drain Current

IDSS

1

AVDS=100V, VGS=0V

Gate-Body Leakage

IGSS

100

nA

VGS=±20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

2.0

4.0

V

I

D

=250 A, VDS=VGS

Static Drain-Source On-State

Resistance (1)

RDS(on)

0.60

0.70

VGS=10V, ID=2.6A

VGS=6V, ID=1.3A

Forward Transconductance (3)

gfs

3.95

S

VDS=15V,ID=2.6A

DYNAMIC (3)

Input Capacitance

Ciss

274

pF

VDS=50V,VGS=0V,

f=1MHz

Output Capacitance

Coss

21

pF

Reverse Transfer Capacitance

Crss

11

pF

SWITCHING(2) (3)

Turn-On Delay Time

td(on)

2.7

ns

VDD =50V, ID=1A

RG=6.0 ,VGS=10V

Rise Time

tr

1.7

ns

Turn-Off Delay Time

td(off)

7.4

ns

Fall Time

tf

3.5

ns

Gate Charge

Qg

3nC

VDS=50V, VGS=5V,

ID=2.5A

Total Gate Charge

Qg

5.4

nC

VDS=50V,VGS=10V,

Gate-Source Charge

Qgs

1.4

nC

Gate-Drain Charge

Qgd

1.5

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.85

0.95

V

TJ=25°C, IS=1.85A,

VGS=0V

Reverse Recovery Time (3)

trr

26

ns

TJ=25°C, IF=1.0A,

di/dt= 100A/

µs

Reverse Recovery Charge (3)

Qrr

30

nC

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.