PSMN009-100B datasheet(3/13 Pages) NXP

Part #	PSMN009-100B

Description	N-channel TrenchMOS SiliconMAX standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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PSMN009-100B_2

Product data sheet

Rev. 02 — 6 July 2009

3 of 13

NXP Semiconductors

PSMN009-100B

N-channel TrenchMOS SiliconMAX standard level FET

4.

Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

VDGR

drain-gate voltage

Tj ≤ 175 °C; Tj ≥ 25 °C; RGS =20kΩ

-100

V

VGS

gate-source voltage

-20

20

V

ID

drain current

VGS =10V; Tmb = 100 °C; see Figure 1

-65

A

VGS =10V; Tmb =25°C; see Figure 1; see Figure 3

-75

A

IDM

peak drain current

tp ≤ 10 µs; pulsed; Tmb =25°C; see Figure 3

-400

A

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-230

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

VGSM

peak gate-source

voltage

pulsed; tp ≤ 50 µs; Tj ≤ 150 °C; δ =25 %

-30

30

V

Source-drain diode

IS

source current

Tmb =25°C

-

75

A

ISM

peak source current

tp ≤ 10 µs; pulsed; Tmb =25°C

-

400

A

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

VGS =10V; Tj(init) =25°C; ID =35A; Vsup =15V;

unclamped; tp =0.1 ms; RGS =50 Ω

-120

mJ

IDS(AL)S

non-repetitive

drain-source avalanche

current

VGS =10V; Vsup =15V; RGS =50 Ω; Tj(init) =25°C;

unclamped

-75

A

Fig 1.

Normalized continuous drain current as a

function of mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

03ah99

0

20

40

60

80

100

120

0

30

60

90

120

150

180

Tmb (°C)

Ider

(%)

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

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