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ZXMN2A01FTC Datasheet(PDF) 3 Page - Zetex Semiconductors |
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ZXMN2A01FTC Datasheet(HTML) 3 Page - Zetex Semiconductors |
3 / 4 page PROVISIONAL ISSUE B - JUNE 2001 ZXMN2A01F 3 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 20 V I D=250µA, VGS=0V Zero Gate Voltage Drain Current I DSS 1 µA V DS=20V, VGS=0V Gate-Body Leakage I GSS 100 nA V GS=±12V, VDS=0V Gate-Source Threshold Voltage V GS(th) 0.7 V I D =250 µA, V DS=VGS Static Drain-Source On-State Resistance (1) R DS(on) 0.09 0.12 0.30 Ω Ω V GS=4.5V, ID=4A V GS=2.5V, ID=1.5A Forward Transconductance (3) g fs 6.2 S V DS=10V,ID=4A DYNAMIC (3) Input Capacitance C iss 299 pF V DS=15V,VGS=0V, f=1MHz Output Capacitance C oss 60 pF Reverse Transfer Capacitance C rss 33 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.31 ns V DD =10V, ID=4A R G=6.0Ω,VGS=5V Rise Time t r 2.60 ns Turn-Off Delay Time t d(off) 1.55 ns Fall Time t f 1.31 ns Total Gate Charge Q g 3.1 nC V DS=10V,VGS=4.5V, ID=4A Gate-Source Charge Q gs 0.7 nC Gate-Drain Charge Q gd 1.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.84 0.95 V T J=25°C, IS=0.6A, V GS=0V Reverse Recovery Time (3) t rr 11.2 ns T J=25°C, IF=4A, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 3.64 nC NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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