PROVISIONAL ISSUE B - JUNE 2001

ZXMN2A01F

3

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

20

V

I

Zero Gate Voltage Drain Current

I

DSS

1

µA

V

Gate-Body Leakage

I

GSS

100

nA

V

Gate-Source Threshold Voltage

V

GS(th)

0.7

V

I

D

=250

µA, V

Static Drain-Source On-State Resistance

(1)

R

DS(on)

0.09

0.12

0.30

Ω

Ω

V

V

Forward Transconductance (3)

g

fs

6.2

S

V

DYNAMIC (3)

Input Capacitance

C

iss

299

pF

V

f=1MHz

Output Capacitance

C

oss

60

pF

Reverse Transfer Capacitance

C

rss

33

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

2.31

ns

V

R

Rise Time

t

r

2.60

ns

Turn-Off Delay Time

t

d(off)

1.55

ns

Fall Time

t

f

1.31

ns

Total Gate Charge

Q

g

3.1

nC

V

Gate-Source Charge

Q

gs

0.7

nC

Gate-Drain Charge

Q

gd

1.0

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.84

0.95

V

T

V

Reverse Recovery Time (3)

t

rr

11.2

ns

T

di/dt= 100A/

µs

Reverse Recovery Charge (3)

Q

rr

3.64

nC

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.