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TPCC8009 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPCC8009
Description  Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCC8009 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPCC8009
2010-01-05
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
10
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 0.2 mA
2.0
3.0
V
VGS = 6 V, ID = 12 A
7.2
11
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 12 A
5
7
m
Ω
Input capacitance
Ciss
1270
Reverse transfer capacitance
Crss
230
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
360
pF
Rise time
tr
6
Turn-on time
ton
13
Fall time
tf
6
Switching time
Turn-off time
toff
Duty
≤ 1%, tw = 10 μs
23
ns
Total gate charge
(gate-source plus gate-drain)
Qg
26
Gate-source charge 1
Qgs1
5
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 24 A
8.2
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
72
A
Forward voltage (diode)
VDSF
IDR = 24 A, VGS = 0 V
−1.2
V
VDD ≈ 15 V
0 V
VGS
10 V
ID = 12 A
VOUT


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