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PSMN015-100B Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN015-100B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page PSMN015-100B_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 December 2009 7 of 12 NXP Semiconductors PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET Fig 9. Drain-source on-state resistance as a function of drain current; typical values Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03am55 0 10 20 30 0 1020 3040 50 ID (A) RDSon (m Ω) VGS = 5 V Tj = 25 °C 5.4 V 10 V 6 V 5.6 V 5.2 V 03al21 0 1 2 3 -60 0 60 120 180 a Tj ( °C) 03am59 0 2 4 6 8 10 0 25 50 75 100 QG (nC) VGS (V) ID = 75 A Tj = 25 °C VDD = 20 V 80 V 03am58 102 103 104 10−1 1 10 102 VDS (V) C (pF) Ciss Coss Crss |
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