PSMN034-100PS_2

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Objective data sheet

Rev. 02 — 1 March 2010

7 of 15

NXP Semiconductors

PSMN034-100PS

N-channel 100 V 34.5 m

Ω standard level MOSFET in TO220.

Source-drain diode

source-drain voltage

-

0.85

1.2

V

reverse recovery time

-38

-

ns

recovered charge

-

59

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Input and reverse capacitances as a function of

gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Output characteristics: drain current as a

function of drain-source voltage; typical values

003aae110

0

10

20

30

40

50

010

20

30

40

I

D

(A)

g

fs

(S)

003aae109

0

500

1000

1500

2000

04

8

12

V GS(V)

C

(pF)

003aae111

20

40

60

80

100

0

5

10

15

20

V GS(V)

R DSon

(m

Ω)

003aae106

0

10

20

30

40

01

23

45

V DS(V)

I

D

(A)

4.5

4

4.7

5.0

5.5

6.5

10.0