PSMN085-150K_2

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Product data sheet

Rev. 02 — 1 March 2010

3 of 13

NXP Semiconductors

PSMN085-150K

N-channel TrenchMOS SiliconMAX standard level FET

4.

Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

150

V

gate-source voltage

-20

20

V

drain current

-3.5

A

peak drain current

-40

A

total power dissipation

-3.5

W

storage temperature

-55

150

°C

junction temperature

-55

150

°C

Source-drain diode

source current

-

3.1

A

peak source current

-

40

A

Fig 1.

Normalized continuous drain current as a

function of solder point temperature

Fig 2.

Normalized total power dissipation as a

function of solder point temperature

0

200

150

50

100

03aa25

40

80

120

(%)

0

0

200

150

50

100

03aa17

40

80

120

(%)

0