1999 May 21

2

NXP Semiconductors

Product data sheet

NPN high-voltage transistor

PZTA44

FEATURES

• Low current (max. 300 mA)

• High voltage (max. 400 V).

APPLICATIONS

• Telecommunication.

DESCRIPTION

NPN high-voltage transistor in a SOT223 plastic package.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

handbook, halfpage

4

12

3

MAM287

Top view

3

2, 4

1

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

500

V

collector-emitter voltage

open base

−

400

V

emitter-base voltage

open collector

−

6

V

collector current (DC)

−

300

mA

peak collector current

−

300

mA

peak base current

−

100

mA

total power dissipation

−

1.35

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C