Technical Note

2/16

BR35H□□□-WC Series

www.rohm.com

2011.03 - Rev.C

© 2011 ROHM Co., Ltd. All rights reserved.

●

Absolute Maximum Ratings (Ta=25℃)

●

Recommended Operating Conditions

Parameter

Symbol

Limits

Unit

Impressed Voltage

Vcc

-0.3 to +6.5

V

Permissible

Dissipation

Pd

560(SOP8)

*

1

mW

560(SOP-J8)

*

2

410(TSSOP-B8) *

3

380(MSOP8)

*

4

Storage

Temperature Range

Tstg

-65 to +150

℃

Operating

Temperature Range

Topr

-40 to +125

℃

Terminal Voltage

-

-0.3 toVcc+0.3

V

＊

When using at Ta=25℃ or higher, 4.5mW (*1,*2),

3.3mW (*3) , 3.1 mW (*4)to be reduced per 1℃

Parameter

Symbol

Limits

Unit

Supply Voltage

Vcc

2.5 to 5.5

V

Input Voltage

Vin

0 to Vcc

●

Memory Cell Characteristics (Vcc=2.5V to 5.5V)

●

Input / Output Capacitance (Ta=25℃, frequency=5MHz)

Parameter

Limits

Unit

Condition

Min.

Typ. Max.

Endurance

*5

1,000,000

-

-

Cycles Ta≦85℃

500,000

-

-

Cycles Ta≦105℃

300,000

-

-

Cycles Ta≦125℃

Data

Retention

*5

40

-

-

Years

Ta≦25℃

25

-

-

Years

Ta≦105℃

20

-

-

Years

Ta≦125℃

*5:Not 100% TESTED

Parameter

Symbol Conditions Min. Max. Unit

Input

Capacitance

*6

－

8

pF

Output

Capacitance

*6

8

*6:Not 100% TESTED

●

Electrical Characteristics (Unless otherwise specified, Ta=-40 to +125℃, Vcc=2.5 to 5.5V)

Parameter

Symbol

Limits

Unit

Conditions

Min.

Typ.

Max.

“H” Input Voltage

VIH

0.7xVcc

－

Vcc+0.3

V

2.5V≦Vcc≦5.5V

“L” Input Voltage

VIL

-0.3

－

0.3xVcc

V

2.5V≦Vcc≦5.5V

“L” Output Voltage

VOL

0

－

0.4

V

IOL=2.1mA

“H” Output Voltage

VOH

Vcc-0.5

－

Vcc

V

IOH=-0.4mA

Input Leakage Current

ILI

-10

－

10

μA

VIN=0V to Vcc

Output Leakage Current

ILO

-10

－

10

μA

VOUT=0V to Vcc, CSB=Vcc

Operating Current

(Write)

ICC1

－

－

2.0

*7

mA

Vcc=2.5V,fSCK=5MHz, tE/W=5ms,

VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN

Byte Wrte, Page Write

2.5

*8

ICC2

－

－

3.0

*7

mA

Vcc=5.5V,fSCK=5MHz, tE/W=5ms,

VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN

Byte Wirte, Page Write

5.5

*8

Operating Current

(Read)

ICC3

－

－

1.5

mA

Vcc=2.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc

SO=OPEN, Read, Read Status Register

ICC4

－

－

2.0

mA

Vcc=5.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc

SO=OPEN, Read, Read Status Register

Standby Current

ISB

－

－

10

μA

Vcc=5.5V

CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN

* This product is not designed for protection against radioactive rays.

*7 BR35H160/320-WC *8 BR35H640/128-WC

●

Block Diagram

SO

INSTRUCTION DECODE

CONTROL CLOCK

GENERATION

VOLTAGE

DETECTION

WRITE

INHIBITION

HIGH VOLTAGE

GENERATOR

INSTRUCTION

REGISTER

16K～128K

EEPROM

ADDRESS

REGISTER

DATA

REGISTER

ADDRESS

DECODER

READ/WRITE

AMP

8bit

8bit

STATUS REGISTER

CSB

SCK

11～14bit *9

11～14bit *9

SI

*9 11bit: BR35H160-WC

12bit: BR35H320-WC

13bit: BR35H640-WC

14bit: BR35H128-WC

Fig.1 Block Diagram