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2SJ412 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SJ412 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SJ412 2009-09-29 4 Case temperature Tc (°C) Vth – Tc −4 0 −80 160 80 −40 40 −1 −3 0 120 Common source VDS = −10 V ID = −1 mA Pulse test −2 Total gate charge Qg (nC) Dynamic Input/Output Characteristic 0 0 −40 −100 100 40 −20 −60 −80 20 60 80 VDS VGS −20 V VDD = −80 V −40 V 0 −8 −20 −4 −12 −16 Common source ID = −16 A Tc = 25°C Pulse test Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) IDR – VDS −0.3 01.0 0.8 0.2 Common source Tc = 25°C Pulse test 0, 1 −1 VGS = −10 V 0.6 −1.0 −3 −10 −30 0.4 −2 −3 −5 −0.5 −5 Case temperature Tc (°C) PD – Tc 0 0 40 80 120 160 20 40 60 80 −8 0 −80 160 40 −40 80 120 Common source Pulse test ID = −8 A −2, −4 −2 −4 VGS = −4 V VGS = −10 V 0 0.1 0.2 0.3 0.5 0.4 30 −0.1 −100 −10 −0.3 Crss −3 100 300 3000 −1 Coss Ciss −30 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1000 5000 50 500 |
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