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2SK2615 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2615 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2615 2009-09-29 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 1 A — 0.33 0.44 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 1 A — 0.23 0.30 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 1.0 2.0 — S Input capacitance Ciss — 150 — Reverse transfer capacitance Crss — 25 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 70 — pF Rise time tr — 25 — Turn−on time ton — 30 — Fall time tf — 50 — Switching time Turn−off time toff — 150 — ns Total gate charge (gate−source plus gate−drain) Qg — 6.0 — Gate−source charge Qgs — 4.6 — Gate−drain (“miller”) Charge Qgd VDD ≈ 48 V, VGS = 10 V, ID = 2 A — 1.4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 2 A Pulse drain reverse current (Note 1) IDRP — — — 6 A Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 100 — ns Reverse recovery charge Qrr IDR = 2 A, VGS = 0 V dIDR / dt = 50 A / μs — 40 — nC |
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