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TPC8403 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8403 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page TPC8403 2006-11-13 4 N-channel Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 3 A ⎯ 38 46 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 25 33 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.9 7.8 ⎯ S Input capacitance Ciss ⎯ 850 ⎯ Reverse transfer capacitance Crss ⎯ 180 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 270 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-ON time ton ⎯ 18 ⎯ Fall time tf ⎯ 6.5 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 μs ⎯ 27 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 17 ⎯ Gate-source charge 1 Qgs1 ⎯ 3 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 24 V, VGS = 10 V, ID = 6 A ⎯ 4 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V RL = 5.0 Ω VDD ∼− 15 V 0 V VGS 10 V ID = 3.0 A VOUT |
Similar Part No. - TPC8403_06 |
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Similar Description - TPC8403_06 |
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