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DS1972 Datasheet(PDF) 4 Page - Maxim Integrated Products |
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DS1972 Datasheet(HTML) 4 Page - Maxim Integrated Products |
4 / 23 page 1024-Bit EEPROM iButton 4 _______________________________________________________________________________________ Note 20: Interval begins tREHMAX after the trailing rising edge on IO for the last time slot of the E/S byte for a valid Copy Scratchpad sequence. Interval ends once the device’s self-timed EEPROM programming cycle is complete and the current drawn by the device has returned from IPROG to IL. Note 21: Write-cycle endurance is degraded as TA increases. Note 22: Not 100% production tested; guaranteed by reliability monitor sampling. Note 23: Data retention is degraded as TA increases. Note 24: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the data sheet limit at operating temperature range is established by reliability testing. Note 25: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem- peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C. COMPARISON TABLE LEGACY VALUES DS1972 VALUES STANDARD SPEED (μs) OVERDRIVE SPEED (μs) STANDARD SPEED (μs) OVERDRIVE SPEED (μs) PARAMETER MIN MAX MIN MAX MIN MAX MIN MAX tSLOT (including tREC) 61 (undefined) 7 (undefined) 65* (undefined) 8* (undefined) tRSTL 480 (undefined) 48 80 480 640 48 80 tPDH 15 60 2 6 15 60 2 6 tPDL 60 240 8 24 60 240 8 24 tW0L 60 120 6 16 60 120 6 15.5 * Intentional change; longer recovery time requirement due to modified 1-Wire front-end. Note: Numbers in bold are not in compliance with legacy 1-Wire product standards. |
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