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RB521CS-30 Datasheet(PDF) 1 Page - Rohm |
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RB521CS-30 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RB521CS-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Low current rectification Features 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability Structure Structure Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25 °C) Symbol Unit VR V Io mA IFSM mA Tj °C Tstg °C Electrical characteristic (Ta=25 °C) Symbol Min. Typ. Max. Unit VF - - 0.35 V IF=10mA IR - - 10 µA VR=10V Junction temperature 150 Storage temperature -40 to +150 Average rectifierd forward current 100 Forward current surge peak (60Hz/1cyc) 500 Parameter Limits Reverse voltage (DC) 30 Parameter Conditions Forward vpltage Reverse current 0.7±0.05 4.0±0.1 2±0.05 φ0.5 4±0.1 2±0.05 φ1.55 0.2±0.05 0.52 RO HM :V M N 2 dot (year w eek factory)+ day 0.16±0.05 0.37±0.03 0.6±0.05 0.35±0.1 VM N2 0.55 1/3 2009.12 - Rev.B |
Similar Part No. - RB521CS-30_09 |
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Similar Description - RB521CS-30_09 |
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