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RSX501LA-20 Datasheet(PDF) 1 Page - Rohm |
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RSX501LA-20 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.10 - Rev.A Schottky barrier diode RSX501LA-20 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR Structure Silicon epitaxial planar Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25 °C) Electrical characteristic (Ta=25 °C) Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.39 V IF=3.0A Reverse current IR - - 500 µA VR=20V Conditions Parameter ROHM : PMDT 2.0 PMDT 4.0±0.1 2.7±0.1 4.0±0.1 2.0±0.05 φ1.55±0.1 0 1.25±0.1 φ1.55±0.1 0 0.25±0.05 Symbol Unit VRM V VR V Io A IFSM A Tj ℃ Tstg ℃ Limits 20 5.0 25 Parameter Reverse voltage (DC) Average rectified forward current (*1) Reverse voltage (repetitive peak) 70 Junction temperature Storage temperature 125 (*1) Alumina substrate at the time of assemble, Tc=90℃ max. -40 to +125 Forward current surge peak (60Hz・1cyc) |
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Similar Description - RSX501LA-20 |
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