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PBSS4021PT Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBSS4021PT Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 14 page 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. PBSS4021PT 20 V, 3.5 A PNP low VCEsat (BISS) transistor Rev. 01 — 29 January 2010 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −20 V IC collector current - - −3.5 A ICM peak collector current single pulse; tp ≤ 1ms -- −8A RCEsat collector-emitter saturation resistance IC = −4A; IB = −400 mA [1] -55 82.5 m Ω |
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