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PBSS4032PT Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBSS4032PT Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page PBSS4032PT_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 18 December 2009 9 of 14 NXP Semiconductors PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times 006aaa266 −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff RC R2 R1 DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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