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HAT2285WP Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # HAT2285WP
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2285WP Datasheet(HTML) 8 Page - Renesas Technology Corp

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HAT2285WP
Preliminary
REJ03G1371-0310 Rev.3.10
Page 8 of 9
May 13, 2010
0
0.4
0.8
1.2
1.6
2.0
20
10
VGS = 0 V, –5 V
5 V
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
10 V
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
10
μ
100
μ
Tc = 25°C
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 8.33°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 10 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
tf
Switching Time Test Circuit
Switching Time Waveform
Rg


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