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RJK0380DPA-00-J53 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0380DPA-00-J53 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1827-0220 Rev.2.20 Page 1 of 6 May 21, 2010 Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) G D SS S DD D 4 12 3 56 7 8 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 8 7 6 5 2 1 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 45 A Drain peak current ID(pulse) Note1 180 A Body-drain diode reverse drain current IDR 45 A Avalanche current IAP Note 2 25 A Avalanche energy EAR Note 2 62.5 mJ Channel dissipation Pch Note3 50 W Channel to Case Thermal Resistance ch-C 2.5 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C REJ03G1827-0220 Rev.2.20 May 21, 2010 |
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