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RJK0456DPB-00-J5 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK0456DPB-00-J5
Description  Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0456DPB-00-J5 Datasheet(HTML) 3 Page - Renesas Technology Corp

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REJ03G1879-0200 Rev.2.00 Mar 04, 2010
Page 1 of 6
Preliminary
RJK0456DPB
Silicon N Channel Power MOS FET
Power Switching
REJ03G1879-0200
Rev.2.00
Mar 04, 2010
Features
 High speed switching
 Low drive current
 Low on-resistance
 R
DS(on) = 2.6 mtyp. (at VGS = 10 V)
 Pb-free
 Halogen-free
 High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
G
D
SSS
4
1 23
5
1, 2, 3
Source
4
Gate
5
Drain
1 2
3 4
5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
40
V
Gate to source voltage
VGSS
20
V
Drain current
ID
50
A
Drain peak current
ID(pulse)
Note1
200
A
Body-drain diode reverse drain current
IDR
50
A
Avalanche current
IAP
Note 2
50
A
Avalanche energy
EAR
Note 2
20
mJ
Channel dissipation
Pch
Note3
65
W
Channel to Case Thermal Resistance
ch-C
1.92
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. PW
 10 s, duty cycle  1%
2. Value at L=10uH, Tch = 25
C, Rg  50 
3. Tc = 25
C


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