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RJK5030DPD Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK5030DPD Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 6 page  RJK5030DPD Preliminary REJ03G1913-0100 Rev.1.00 Page 4 of 5 Apr 12, 2010 0 50200 150 100 250 1000 100 800 0 16 600 12 400 8 200 4 48 12 16 20 0 10 1 VGS = 0 f = 1 MHz Tc = 25 °C Ciss Coss Crss Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics (Typical) 0 0.4 0.8 1.21.6 2.0 20 8 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) 5 4 3 2 1 -25 0 50 100 150 25 125 75 0 Case Temperature Tc ( °C) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) VDS = 10 V 1 mA 0.1 mA 4 12 16 ID = 5 A Ta = 25 °C VDS VGS VDD = 100 V 200 V 400 V VDD = 400 V 200 V 100 V VGS = 0 Ta = 25 °C Pulse Test ID = 10 mA 0.01 1 100 0.1 10 10 m100 m1 10 Pulse Width PW (s) Thermal Impedance vs. Pulse Width Tc = 25 °C Single pulse 100 μ 10 μ 1 m |
Similar Part No. - RJK5030DPD |
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Similar Description - RJK5030DPD |
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