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AUIRF7739L2TR Datasheet(PDF) 2 Page - International Rectifier |
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AUIRF7739L2TR Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page AUIRF7739L2TR/TR1 2 www.irf.com Surface mounted on 1 in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes through are on page 10 Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.008 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 700 1000 µ Ω VGS(th) Gate Threshold Voltage 2.0 2.8 4.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.7 ––– mV/°C gfs Forward Transconductance 290 ––– ––– S RG Gate Resistance ––– 1.5 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 220 330 Qgs1 Pre-Vth Gate-to-Source Charge ––– 46 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 19 ––– nC See Fig. 11 Qgd Gate-to-Drain ("Miller") Charge ––– 81 ––– Qgodr Gate Charge Overdrive ––– 74 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 100 ––– Qoss Output Charge ––– 83 ––– nC td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time ––– 71 ––– ns td(off) Turn-Off Delay Time ––– 56 ––– tf Fall Time ––– 42 ––– Ciss Input Capacitance ––– 11880 ––– Coss Output Capacitance ––– 2510 ––– Crss Reverse Transfer Capacitance ––– 1240 ––– pF Coss Output Capacitance ––– 8610 ––– Coss Output Capacitance ––– 2230 ––– Coss eff. Effective Output Capacitance ––– 3040 ––– Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 110 (Body Diode) A ISM Pulsed Source Current ––– ––– 1070 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 87 130 ns Qrr Reverse Recovery Charge ––– 250 380 nC IF = 160A, VDD = 20V di/dt = 100A/µs i IS = 160A, VGS = 0V i ID = 160A VDS = 16V, VGS = 0V VDD = 20V, VGS = 10VÃi ID = 160A RG = 1.8 Ω ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 160A i VDS = VGS, ID = 250µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = -20V VDS = 50V, ID = 160A showing the integral reverse VDS = 20V, VGS = 10V VGS = 20V VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 32V, f=1.0MHz Conditions p-n junction diode. MOSFET symbol Conditions VGS = 0V VDS = 25V |
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