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AUIRF7739L2TR1 Datasheet(PDF) 1 Page - International Rectifier |
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AUIRF7739L2TR1 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  Description The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro- cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat- forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. www.irf.com 1 01/05/10 AUIRF7739L2TR AUIRF7739L2TR1 PD - 97442 Applicable DirectFET Outline and Substrate Outline Automotive DirectFET Power MOSFET AUTOMOTIVE GRADE DirectFET ISOMETRIC L8 HEXFET® is a registered trademark of International Rectifier. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free SB SC M2 M4 L4 L6 L8 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f A ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current f PD @TC = 25°C Power Dissipation f PD @TA = 25°C Power Dissipation e EAS Single Pulse Avalanche Energy (Thermally Limited) h mJ EAS (tested) Single Pulse Avalanche Energy Tested Value g IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ TP Peak Soldering Temperature TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 40 RθJA Junction-to-Ambient j 12.5 ––– RθJA Junction-to-Ambient k 20 ––– °C/W RθJCan Junction-to-Can fl ––– 1.2 RθJ-PCB Junction-to-PCB Mounted ––– 0.5 Linear Derating Factor f W/°C ± 20 375 0.83 46 125 W 3.8 270 °C -55 to + 175 Max. 270 190 1070 160 270 See Fig.12a, 12b, 15, 16 40 V(BR)DSS 40V RDS(on) typ. 700µ Ω max. 1000µ Ω ID (Silicon Limited) 270A Qg 220nC |
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